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An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III-V epitaxial materials

Whitehouse, C.R.; Barnett, S.J.; Soley, D.E.J.; Quarrell, J.; Aldridge, S.J.; Cullis, A.G.; Emeny, M.T.; Johnson, A.D.; Clarke, G.F.; Lamb, W.; Tanner, B.K.; Cottrell, S.; Lunn, B.; Hogg, C.; Hagston, W.

Authors

C.R. Whitehouse

S.J. Barnett

D.E.J. Soley

J. Quarrell

S.J. Aldridge

A.G. Cullis

M.T. Emeny

A.D. Johnson

G.F. Clarke

W. Lamb

S. Cottrell

B. Lunn

C. Hogg

W. Hagston



Citation

Whitehouse, C., Barnett, S., Soley, D., Quarrell, J., Aldridge, S., Cullis, A., …Hagston, W. (1992). An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III-V epitaxial materials. Review of Scientific Instruments, 63, 634-637

Journal Article Type Article
Publication Date 1992
Journal Review of Scientific Instruments
Print ISSN 0034-6748
Publisher American Institute of Physics
Volume 63
Pages 634-637
Public URL https://durham-repository.worktribe.com/output/1587502
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1992RScI...63..634W&db_key=INST



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