Visible electroluminescence from a polyaniline-porous silicon junction

Halliday, DP; Eggleston, JM; Adams, PN; Pentland, IA; Monkman, AP

Abstract

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model. The barrier height determined from our data varies from 0.78 to 0.85eV. The ideality factor ranges from 2.8 - 5.2. Visible electroluminescence has been obtained from this junction when it is placed under a forward bias.

Citation

Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

• Journal Article Type: Article
• Publication Date: 1997-02
• Journal: Synthetic Metals
• Print ISSN: 0379-6779
• Publisher: Elsevier
• Volume: 85
• Issue: 1-3
• Pages: 1245-1246
• Keywords: organic/inorganic interfaces; polyaniline; light sources