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Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers

Bera, M.K; Chakraborty, S; Das, R; Dalapati, G.K; Chattopadhyay, S; Samanta, S.K; Yoo, W.J; Chakraborty, A.K; Butenko, Y; Siller, L; Hunt, M.R.C; Saha, S; Maiti, C.K


M.K Bera

S Chakraborty

R Das

G.K Dalapati

S Chattopadhyay

S.K Samanta

W.J Yoo

A.K Chakraborty

Y Butenko

L Siller

S Saha

C.K Maiti


Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7)Si1-xGex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxide/SiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.

Journal Article Type Article
Publication Date 2006-02
Journal Journal of Vacuum Science and Technology A
Print ISSN 0734-2101
Publisher American Vacuum Society
Peer Reviewed Peer Reviewed
Volume 24
Issue 1
Pages 84-90
Public URL