Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers

Bera, M.K; Chakraborty, S; Das, R; Dalapati, G.K; Chattopadhyay, S; Samanta, S.K; Yoo, W.J; Chakraborty, A.K; Butenko, Y; Siller, L; Hunt, M.R.C; Saha, S; Maiti, C.K

Abstract

Rapid thermal oxidation (RTO) of the Ge-rich (x=0.7)Si1-xGex heterolayer is reported. In particular, the structural modifications of SiGe films during oxidation process and the dependence of the oxidation kinetics on Ge content, oxidation temperature, and oxide thickness have been studied. The segregation mechanism of Ge at the oxide/SiGe interface is discussed. Interface properties of the RTO-grown oxides studied using high-frequency capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor capacitors are also reported.

Citation

Bera, M., Chakraborty, S., Das, R., Dalapati, G., Chattopadhyay, S., Samanta, S., …Maiti, C. (2006). Rapid thermal oxidation of Ge-rich Si1-xGex heterolayers. Journal of Vacuum Science and Technology A, 24(1), 84-90

• Journal Article Type: Article
• Publication Date: 2006-02
• Journal: Journal of Vacuum Science and Technology A
• Print ISSN: 0734-2101
• Publisher: American Vacuum Society
• Peer Reviewed: Peer Reviewed
• Volume: 24
• Issue: 1
• Pages: 84-90
• Public URL: https://durham-repository.worktribe.com/output/1564918