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The effect of ionization threshold softness on the temperature dependence of the impact ionization coefficient

Groves, C; David, JPR; Rees, GJ

Authors

JPR David

GJ Rees



Citation

Groves, C., David, J., & Rees, G. (2003). The effect of ionization threshold softness on the temperature dependence of the impact ionization coefficient. Semiconductor Science and Technology, 18(7), 689-692

Journal Article Type Article
Publication Date 2003-07
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Volume 18
Issue 7
Pages 689-692
Keywords AVALANCHE MULTIPLICATION; SEMICONDUCTORS; MODEL; PHOTODIODES; ALXGA1-XAS; GAAS; RATES
Public URL https://durham-repository.worktribe.com/output/1556628