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Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy.

Cirlin, G.E.; Dubrovskii, V.G.; Samsonenko, Y.B.; Bouravleuv, A.D.; Durose, K.; Proskruryakov, Y.Y.; Mendes, B.; Bowen, L.; Kaliteevski, M.A.; Abram, R.; Zeze, D.A.

Authors

G.E. Cirlin

V.G. Dubrovskii

Y.B. Samsonenko

A.D. Bouravleuv

K. Durose

Y.Y. Proskruryakov

B. Mendes

Leon Bowen leon.bowen@durham.ac.uk
Senior Manager (Electron Microscopy)

M.A. Kaliteevski



Contributors

Citation

Cirlin, G., Dubrovskii, V., Samsonenko, Y., Bouravleuv, A., Durose, K., Proskruryakov, Y., …Zeze, D. (2010). Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. Physical review B, 82(3), Article 035302. https://doi.org/10.1103/physrevb.82.035302

Journal Article Type Article
Publication Date 2010
Deposit Date Oct 6, 2010
Journal Physical Review B
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 82
Issue 3
Article Number 035302
DOI https://doi.org/10.1103/physrevb.82.035302


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