Electrical and optical properties of a polymer semiconductor interface

Halliday, DP; Gray, JW; Adams, PN; Monkman, AP

Abstract

We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potential barrier formed at the interface. We have used simple thermionic emission theory for a Schottky type barrier to model the results. This has shown no significant change in the barrier height as the fermi level moves through the semiconductor bandgap by changing from n-type to p-type substrates. We have measured the temperature dependence of the barrier height. Using n-type GaAs we can observe electroluminescence centred at 680 nm with a FWHM of 160 nn at a current density of 5 mA cm(-2). Our data suggests that the interface characteristics are controlled by surface states on the GaAs layer.

Citation

Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878

• Journal Article Type: Article
• Publication Date: 1999-06
• Journal: Synthetic Metals
• Print ISSN: 0379-6779
• Electronic ISSN: 1879-3290
• Publisher: Elsevier
• Volume: 102
• Issue: 1-3
• Pages: 877-878
• Keywords: electroluminescence; transport measurements; organic inorganic interfaces; light sourcesPOLYANILINE; FILMS
• Public URL: https://durham-repository.worktribe.com/output/1535745