Temperature dependence of impact ionization in GaAs

Groves, C; Ghin, R; David, JPR; Rees, GJ

Temperature dependence of impact ionization in GaAs

Groves, C; Ghin, R; David, JPR; Rees, GJ

Authors

Professor Chris Groves chris.groves@durham.ac.uk
Professor

R Ghin

JPR David

GJ Rees

Citation

Groves, C., Ghin, R., David, J., & Rees, G. (2003). Temperature dependence of impact ionization in GaAs. IEEE Transactions on Electron Devices, 50(10), 2027-2031

Journal Article Type	Article
Publication Date	2003-10
Journal	IEEE Transactions on Electron Devices
Print ISSN	0018-9383
Electronic ISSN	1557-9646
Publisher	Institute of Electrical and Electronics Engineers
Volume	50
Issue	10
Pages	2027-2031
Keywords	avalanche diodes; avalanche photodiodes; impact ionization; ionization coefficients; semiconductor materials measurements; temperature dependenceAVALANCHE MULTIPLICATION; BREAKDOWN VOLTAGE; SIMPLE-MODEL; COEFFICIENTS; PHOTODIODES; ALXGA1-XAS; DIODES; NOIS
Public URL	https://durham-repository.worktribe.com/output/1526020

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