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Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging

Danilewsky, AN; Wittge, J; Croell, A; Allen, D; McNally, P; Vagovic, P; Rolo, TD; Li, Z; Baumbach, T; Gorostegui-Colinas, E; Garagorri, J; Elizalde, MR; Fossati, MC; Bowen, DK; Tanner, BK

Authors

AN Danilewsky

J Wittge

A Croell

D Allen

P McNally

P Vagovic

TD Rolo

Z Li

T Baumbach

E Gorostegui-Colinas

J Garagorri

MR Elizalde

MC Fossati

DK Bowen



Citation

Danilewsky, A., Wittge, J., Croell, A., Allen, D., McNally, P., Vagovic, P., …Tanner, B. (2011). Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging. Journal of Crystal Growth, 318(1), 1157-1163. https://doi.org/10.1016/j.jaysgro.2010.10.199

Journal Article Type Article
Publication Date 2011-03
Deposit Date Jun 24, 2011
Journal Journal of Crystal Growth
Print ISSN 0022-0248
Publisher Elsevier
Volume 318
Issue 1
Pages 1157-1163
DOI https://doi.org/10.1016/j.jaysgro.2010.10.199
Keywords X-ray topography; Dislocation dynamics; High temperature; in-situTOPOGRAPHY; CRYSTALS


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