Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures

Cramman, H.; Eastwood, D.S.; King, J.A.; Atkinson, D.

Abstract

Designs for two novel multilevel magnetic random access memory (MRAM) concepts are presented in this paper along with their associated control circuit architectures. Both the ChiralMEM and 3-D-MRAM concepts contain eight states with distinct electrical resistances, giving a 3 bit-per-cell capacity. Operation of the two memory concepts are presented along with designs for the circuitry in particular focusing on the conversion of three conventional binary bits to octal encoded data and the required sequence for writing eight states per cell using current-driven magnetic fields. Discrimination and subsequent conversion of the eight readout resistance levels back to three conventional binary bits are discussed along with the write sequence for controlling arrays of multibit memory cells.

Citation

Cramman, H., Eastwood, D., King, J., & Atkinson, D. (2012). Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures. IEEE Transactions on Nanotechnology, 11(1), 63-70. https://doi.org/10.1109/tnano.2011.2149538

• Journal Article Type: Article
• Publication Date: Jan 1, 2012
• Deposit Date: Mar 19, 2014
• Publicly Available Date: May 1, 2014
• Journal: IEEE Transactions on Nanotechnology
• Print ISSN: 1536-125X
• Electronic ISSN: 1941-0085
• Publisher: Institute of Electrical and Electronics Engineers
• Peer Reviewed: Peer Reviewed
• Volume: 11
• Issue: 1
• Pages: 63-70
• DOI: https://doi.org/10.1109/tnano.2011.2149538
• Public URL: https://durham-repository.worktribe.com/output/1458178