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Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures

Cramman, H.; Eastwood, D.S.; King, J.A.; Atkinson, D.

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Authors

D.S. Eastwood

J.A. King



Abstract

Designs for two novel multilevel magnetic random access memory (MRAM) concepts are presented in this paper along with their associated control circuit architectures. Both the ChiralMEM and 3-D-MRAM concepts contain eight states with distinct electrical resistances, giving a 3 bit-per-cell capacity. Operation of the two memory concepts are presented along with designs for the circuitry in particular focusing on the conversion of three conventional binary bits to octal encoded data and the required sequence for writing eight states per cell using current-driven magnetic fields. Discrimination and subsequent conversion of the eight readout resistance levels back to three conventional binary bits are discussed along with the write sequence for controlling arrays of multibit memory cells.

Citation

Cramman, H., Eastwood, D., King, J., & Atkinson, D. (2012). Multilevel 3 Bit-per-cell Magnetic Random Access Memory Concepts and Their Associated Control Circuit Architectures. IEEE Transactions on Nanotechnology, 11(1), 63-70. https://doi.org/10.1109/tnano.2011.2149538

Journal Article Type Article
Publication Date Jan 1, 2012
Deposit Date Mar 19, 2014
Publicly Available Date May 1, 2014
Journal IEEE Transactions on Nanotechnology
Print ISSN 1536-125X
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 11
Issue 1
Pages 63-70
DOI https://doi.org/10.1109/tnano.2011.2149538

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