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Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

Hopf, Toby; Vassilevski, Konstantin; Escobedo-Cousin, Enrique; Wright, Nick; O'Neill, Anthony G.; Horsfall, Alton; Goss, Jonathan P.; Barlow, Anders; Wells, George; Hunt, Michael

Authors

Toby Hopf

Konstantin Vassilevski

Enrique Escobedo-Cousin

Nick Wright

Anthony G. O'Neill

Alton Horsfall

Jonathan P. Goss

Anders Barlow

George Wells



Citation

Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Wright, N., O'Neill, A. G., Horsfall, A., …Hunt, M. (2014). Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC. Materials Science Forum, 778-780, 1154-1157. https://doi.org/10.4028/www.scientific.net/msf.778-780.1154

Journal Article Type Article
Publication Date 2014
Deposit Date Nov 4, 2014
Journal Materials Science Forum
Print ISSN 0255-5476
Publisher Trans Tech Publications
Peer Reviewed Peer Reviewed
Volume 778-780
Pages 1154-1157
DOI https://doi.org/10.4028/www.scientific.net/msf.778-780.1154
Public URL https://durham-repository.worktribe.com/output/1451296