Toby Hopf
Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
Hopf, Toby; Vassilevski, Konstantin; Escobedo-Cousin, Enrique; Wright, Nick; O'Neill, Anthony G.; Horsfall, Alton; Goss, Jonathan P.; Barlow, Anders; Wells, George; Hunt, Michael
Authors
Konstantin Vassilevski
Enrique Escobedo-Cousin
Nick Wright
Anthony G. O'Neill
Alton Horsfall
Jonathan P. Goss
Anders Barlow
George Wells
Dr Michael Hunt m.r.c.hunt@durham.ac.uk
Associate Professor
Citation
Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Wright, N., O'Neill, A. G., Horsfall, A., …Hunt, M. (2014). Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC. Materials Science Forum, 778-780, 1154-1157. https://doi.org/10.4028/www.scientific.net/msf.778-780.1154
Journal Article Type | Article |
---|---|
Publication Date | 2014 |
Deposit Date | Nov 4, 2014 |
Journal | Materials Science Forum |
Print ISSN | 0255-5476 |
Publisher | Trans Tech Publications |
Peer Reviewed | Peer Reviewed |
Volume | 778-780 |
Pages | 1154-1157 |
DOI | https://doi.org/10.4028/www.scientific.net/msf.778-780.1154 |
Public URL | https://durham-repository.worktribe.com/output/1451296 |
You might also like
Facile technique for the removal of metal contamination from graphene
(2015)
Journal Article