Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Hopf, T.; Vassilevski, K.V.; Escobedo-Cousin, E.; King, P.J.; Wright, N.G.; O'Neill, A.G.; Horsfall, A.B.; Goss, J.P.; Wells, G.H.; Hunt, M.R.C

doi:10.1063/1.4898562

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Hopf, T.; Vassilevski, K.V.; Escobedo-Cousin, E.; King, P.J.; Wright, N.G.; O'Neill, A.G.; Horsfall, A.B.; Goss, J.P.; Wells, G.H.; Hunt, M.R.C

Authors

T. Hopf

K.V. Vassilevski

E. Escobedo-Cousin

P.J. King

N.G. Wright

A.G. O'Neill

A.B. Horsfall

J.P. Goss

G.H. Wells

Dr Michael Hunt m.r.c.hunt@durham.ac.uk
Associate Professor

Abstract

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27 nm thick Al2O3 gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100 °C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100 °C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100 °C.

Citation

Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2014). Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature. Journal of Applied Physics, 116(15), Article 154504. https://doi.org/10.1063/1.4898562

Journal Article Type	Article
Acceptance Date	Oct 6, 2014
Online Publication Date	Oct 17, 2014
Publication Date	Oct 17, 2014
Deposit Date	Nov 4, 2014
Publicly Available Date	Nov 12, 2014
Journal	Journal of Applied Physics
Print ISSN	0021-8979
Electronic ISSN	1089-7550
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	116
Issue	15
Article Number	154504
DOI	https://doi.org/10.1063/1.4898562
Public URL	https://durham-repository.worktribe.com/output/1418315

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© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 116, 154504 (2014) and may be found at http://dx.doi.org/10.1063/1.4898562.