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Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates

Hopf, T.; Vassilevski, K.; Escobedo-Cousin, E.; King, P.; Wright, N.G.; O'Neill, A.G.; Horsfall, A.B.; Goss, J.; Wells, G.; Hunt, M.

Authors

T. Hopf

K. Vassilevski

E. Escobedo-Cousin

P. King

N.G. Wright

A.G. O'Neill

A.B. Horsfall

J. Goss

G. Wells



Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3 over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Journal Article Type Article
Acceptance Date Jan 21, 2015
Publication Date Jun 1, 2015
Deposit Date Aug 13, 2015
Journal Materials Science Forum
Print ISSN 0255-5476
Publisher Trans Tech Publications
Peer Reviewed Peer Reviewed
Volume 821-823
Pages 937-940
DOI https://doi.org/10.4028/www.scientific.net/msf.821-823.937
Keywords AFM, ALD, Epitaxial Graphene, Graphene Field-Effect Transistors, Raman Spectroscopy, STM
Public URL https://durham-repository.worktribe.com/output/1433921