Direct growth of Si nanowires on flexible organic substrates

Tian (田琳), Lin; Di Mario, Lorenzo; Minotti, Antonio; Tiburzi, Giorgio; Mendis, Budhika G.; Zeze, Dagou A.; Martelli, Faustino

Abstract

A key characteristic of semiconductor nanowires (NWs) is that they grow on any substrate that can withstand the growth conditions, paving the way for their use in flexible electronics. We report on the direct growth of crystalline silicon nanowires on polyimide substrates. The Si NWs are grown by plasma-enhanced chemical vapor deposition, which allows the growth to proceed at temperatures low enough to be compatible with plastic substrates (350 °C), where gold or indium are used as growth seeds. In is particularly interesting as the seed not only because it leads to a better NW crystal quality but also because it overcomes a core problem induced by the use of Au in silicon processing, i.e. Au creates deep carrier traps when incorporated in the nanowires.

Citation

Tian (田琳), L., Di Mario, L., Minotti, A., Tiburzi, G., Mendis, B. G., Zeze, D. A., & Martelli, F. (2016). Direct growth of Si nanowires on flexible organic substrates. Nanotechnology, 27(22), Article 225601. https://doi.org/10.1088/0957-4484/27/22/225601

• Journal Article Type: Article
• Acceptance Date: Mar 31, 2016
• Online Publication Date: Apr 21, 2016
• Publication Date: Jun 3, 2016
• Deposit Date: May 25, 2016
• Publicly Available Date: Apr 21, 2017
• Journal: Nanotechnology
• Print ISSN: 0957-4484
• Electronic ISSN: 1361-6528
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 27
• Issue: 22
• Article Number: 225601
• DOI: https://doi.org/10.1088/0957-4484/27/22/225601
• Public URL: https://durham-repository.worktribe.com/output/1411416