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Structure and electronic properties of domain walls and stacking fault defects in prospective photoferroic materials bournonite and enargite

Rigby, O.M.; Richards-Hlabangana, T.; Ramasse, Q.M.; MacLaren, I.; Lomas-Zapata, R.A.; Rumsey, M.S.; McKenna, K.P.; Mendis, B.G.

Structure and electronic properties of domain walls and stacking fault defects in prospective photoferroic materials bournonite and enargite Thumbnail


Authors

Profile image of Oliver Rigby

Oliver Rigby oliver.rigby@durham.ac.uk
PGR Student Doctor of Philosophy

T. Richards-Hlabangana

Q.M. Ramasse

I. MacLaren

R.A. Lomas-Zapata

M.S. Rumsey

K.P. McKenna



Abstract

Bournonite (CuPbSbS3) and enargite (Cu3AsS4) have recently been used as absorber layers in thin-film photovoltaic devices due to their ideal bandgap and ferroelectric properties. An understanding of the ferroelectric domain structure in these materials is required so that the benefits of the internal depolarizing electric fields can be fully exploited. Here, the atomic structure and electronic properties of domain walls (DWs) are elucidated through a combined aberration-corrected scanning transmission electron microscopy and density functional theory study. ∼90° and 180° DWs are observed in bournonite. As the 180° DW is charge neutral, it cannot contribute to the anomalous photovoltaic effect that leads to high open circuit voltages. The ∼90° DW shows a slight offset across the boundary, but the contributions of this to the anomalous photovoltaic effect are negligible. The DWs are also electrically passive, i.e., they do not result in significant recombination and do not block charge carrier transport. A high density of stacking faults (SF) was, however, observed in enargite. The SFs have a large number of defect states within the bandgap, which would lower the device efficiency through Shockley–Read–Hall recombination.

Citation

Rigby, O., Richards-Hlabangana, T., Ramasse, Q., MacLaren, I., Lomas-Zapata, R., Rumsey, M., McKenna, K., & Mendis, B. (2022). Structure and electronic properties of domain walls and stacking fault defects in prospective photoferroic materials bournonite and enargite. Journal of Applied Physics, 132(18), Article 185001. https://doi.org/10.1063/5.0095091

Journal Article Type Article
Acceptance Date Sep 15, 2022
Online Publication Date Nov 8, 2022
Publication Date Nov 14, 2022
Deposit Date Nov 11, 2022
Publicly Available Date Nov 11, 2022
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 132
Issue 18
Article Number 185001
DOI https://doi.org/10.1063/5.0095091
Public URL https://durham-repository.worktribe.com/output/1185737

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Copyright Statement
© 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).






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