Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios.

Muhieddine, Khalid; Ullah, Mujeeb; Maasoumi, Fatemeh; Burn, Paul. L.; Namdas, Ebinazar B.

doi:10.1002/adma.201502554

Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios.

Muhieddine, Khalid; Ullah, Mujeeb; Maasoumi, Fatemeh; Burn, Paul. L.; Namdas, Ebinazar B.

Authors

Khalid Muhieddine

Dr Mujeeb Chaudhry mujeeb.u.chaudhry@durham.ac.uk
Associate Professor

Fatemeh Maasoumi

Paul. L. Burn

Ebinazar B. Namdas

Abstract

Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.

Citation

Muhieddine, K., Ullah, M., Maasoumi, F., Burn, P. L., & Namdas, E. B. (2015). Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios. Advanced Materials, 27(42), 6677-6682. https://doi.org/10.1002/adma.201502554

Journal Article Type	Article
Acceptance Date	May 28, 2015
Online Publication Date	Sep 24, 2015
Publication Date	2015-11
Deposit Date	Apr 13, 2017
Journal	Advanced Materials
Print ISSN	0935-9648
Electronic ISSN	1521-4095
Publisher	Wiley
Peer Reviewed	Peer Reviewed
Volume	27
Issue	42
Pages	6677-6682
DOI	https://doi.org/10.1002/adma.201502554
Public URL	https://durham-repository.worktribe.com/output/1360667