Selective reflection from an Rb layer with a thickness below λ/12 and applications

Sargsyan, Armen; Papoyan, Aram; Hughes, Ifan G.; Adams, Charles S.; Sarkisyan, David

Abstract

We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L < 70 nm, which is smaller than the length scale of evanescent fields λ∕2π and more than an order of magnitude smaller than the optical wavelength. A 240 MHz redshift due to the atom-surface interaction is observed for a cell thickness of L 40 nm. In addition, complete frequency-resolved hyperfine Paschen– Back splitting of atomic transitions to four components for 87Rb and six components for 87Rb is recorded in a strong magnetic field (B > 2 kG).

Citation

Sargsyan, A., Papoyan, A., Hughes, I. G., Adams, C. S., & Sarkisyan, D. (2017). Selective reflection from an Rb layer with a thickness below λ/12 and applications. Optics Letters, 42(8), 1476-1479. https://doi.org/10.1364/ol.42.001476

• Journal Article Type: Article
• Acceptance Date: Mar 14, 2017
• Online Publication Date: Apr 4, 2017
• Publication Date: Apr 4, 2017
• Deposit Date: May 17, 2017
• Publicly Available Date: Apr 4, 2018
• Journal: Optics Letters
• Print ISSN: 0146-9592
• Electronic ISSN: 1539-4794
• Publisher: Optica
• Peer Reviewed: Peer Reviewed
• Volume: 42
• Issue: 8
• Pages: 1476-1479
• DOI: https://doi.org/10.1364/ol.42.001476
• Public URL: https://durham-repository.worktribe.com/output/1358875