Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening

Dagan, Ronen; Vaknin, Yonatan; Weisman, Dror; Amit, Iddo; Rosenwaks, Yossi

Abstract

Van der Waals layered transition metal dichalcogenides, usually exhibit high contact resistance due to the induced Schottky barriers, which occur at non-ideal metal-semiconductor contacts. These barriers usually contribute to an underestimation in the determination of mobility, when extracted by standard, two terminals methods. Furthermore, in devices based on atomically-thin materials, channels with thickness of up to a few layers cannot completely screen the applied gate bias, resulting in an incomplete potential drop over the channel; the resulting decreased field-effect causes further underestimation of the mobility. We demonstrate a method based on Kelvin probe force microscopy, which allows us to extract the accurate semiconductor mobility and eliminates the effects of contact quality and/or screening ability. Our results reveal up to a sevenfold increase in mobility in a monolayer device.

Citation

Dagan, R., Vaknin, Y., Weisman, D., Amit, I., & Rosenwaks, Y. (2019). Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate Screening. ACS Applied Materials and Interfaces, 11(47), 44406-44412. https://doi.org/10.1021/acsami.9b12611

• Journal Article Type: Article
• Acceptance Date: Nov 6, 2019
• Online Publication Date: Nov 14, 2019
• Publication Date: Nov 27, 2019
• Deposit Date: Nov 13, 2019
• Publicly Available Date: Nov 14, 2020
• Journal: ACS Applied Materials and Interfaces
• Print ISSN: 1944-8244
• Electronic ISSN: 1944-8252
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 11
• Issue: 47
• Pages: 44406-44412
• DOI: https://doi.org/10.1021/acsami.9b12611
• Public URL: https://durham-repository.worktribe.com/output/1313992