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In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices

Tanner, B.K.; Vijayaraghavan, R.K.; Roarty, B.; Danilewsky, A.N.; McNally, P.J.

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Authors

R.K. Vijayaraghavan

B. Roarty

A.N. Danilewsky

P.J. McNally



Abstract

The application of X-ray Diffraction Imaging to measure in operando thermal strains at individually powered components within fully packaged LM3046 silicon devices is described. It is shown that as the local strains increase with power dissipated, above a threshold power loading, the associated region of enhanced X-ray intensity increases monotonically. The changes in contrast in the image are discussed. Asterism in section topographs changes sign as the slit is moved across the component, consistent with lattice strain around the device due to the thermal expansion. Above a threshold power, this asterism increases linearly with power loading. By simultaneous measurement of the package surface temperature it is possible to deduce the local component temperature from the extent of the contrast in the X-ray image.

Citation

Tanner, B., Vijayaraghavan, R., Roarty, B., Danilewsky, A., & McNally, P. (2019). In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices. Microelectronics Reliability, 99, 232-238. https://doi.org/10.1016/j.microrel.2019.06.006

Journal Article Type Article
Acceptance Date Jun 5, 2019
Online Publication Date Jun 27, 2019
Publication Date Aug 31, 2019
Deposit Date Jul 5, 2019
Publicly Available Date Jun 27, 2020
Journal Microelectronics Reliability
Print ISSN 0026-2714
Electronic ISSN 1872-941X
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 99
Pages 232-238
DOI https://doi.org/10.1016/j.microrel.2019.06.006
Public URL https://durham-repository.worktribe.com/output/1292884

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