High-frequency metal-insulator-metal (MIM) diodes for thermal radiation harvesting.

Etor, D.; Dodd, L.E.; Wood., D.; Balocco, C.

Abstract

The fabrication of low-cost metal-insulator-metal (MIM) diodes using a self-assembled monolayer as the insulating layer is presented. DC and AC analysis show that the diodes have excellent non-linear current voltage characteristics compared to those typically reported, with a zero-bias curvature coefficient ranging from 0.5 V-1 to 5.4 V-1, voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The process developed for fabricating these diodes is simple, cost effective, and can potentially be used in the roll-to-roll manufacturing of MIM diodes. Reliability tests performed on the fabricated OTS diodes shows that the OTS layer of the diodes remains unaffected by high temperature up to approximately 450 °C which is significant in thermal energy harvesting applications, where the diode may be exposed to high temperatures.

Citation

Etor, D., Dodd, L., Wood., D., & Balocco, C. (2015). High-frequency metal-insulator-metal (MIM) diodes for thermal radiation harvesting. In 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Hong Kong, 2015. https://doi.org/10.1109/irmmw-thz.2015.7327649

• Conference Name: 40th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THZ)
• Conference Location: Hong Kong
• Online Publication Date: Nov 12, 2015
• Publication Date: 2015-11
• Deposit Date: Dec 11, 2015
• Publisher: Institute of Electrical and Electronics Engineers
• Book Title: 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Hong Kong, 2015
• DOI: https://doi.org/10.1109/irmmw-thz.2015.7327649
• Additional Information: Date of Conference: 23-28 August 2015