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Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography

Guo, J.; Yang, Y.; Raghothamachar, B.; Dudley, M.; Welt, S; Danilewsky, A.N.; McNally, P.J.; Tanner, B.K.

Authors

J. Guo

Y. Yang

B. Raghothamachar

M. Dudley

S Welt

A.N. Danilewsky

P.J. McNally



Contributors

R. Stahlbush
Editor

P. Neudeck
Editor

A. Bhalla
Editor

R.P. Devaty
Editor

M. Dudley
Editor

A. Lelis
Editor

Citation

Guo, J., Yang, Y., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., McNally, P., & Tanner, B. (2018, December). Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography. Presented at 2017 International Conference on Silicon Carbide and Related Materials, Washington DC

Presentation Conference Type Conference Paper (published)
Conference Name 2017 International Conference on Silicon Carbide and Related Materials
Publication Date 2018
Deposit Date Oct 12, 2018
Volume 924
Pages 176-179
Series Title Materials Science Forum
Book Title Silicon Carbide and Related Materials 2017
DOI https://doi.org/10.4028/www.scientific.net/msf.924
Public URL https://durham-repository.worktribe.com/output/1145236



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