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In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers

Yang, Y.; Guo, J.; Raghothamachar, B.; Dudley, M.; Welt, S.; Danilewsky, A.N.; McNally, P.J.; Tanner, B.K.

Authors

Y. Yang

J. Guo

B. Raghothamachar

M. Dudley

S. Welt

A.N. Danilewsky

P.J. McNally



Contributors

R. Stahlbush
Editor

P. Neudeck
Editor

A. Bhalla
Editor

R.P. Devaty
Editor

M. Dudley
Editor

A. Lelis
Editor

Citation

Yang, Y., Guo, J., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., McNally, P., & Tanner, B. (2018, December). In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers. Presented at 2017 International Conference on Silicon Carbide and Related Materials, Washington DC

Presentation Conference Type Conference Paper (published)
Conference Name 2017 International Conference on Silicon Carbide and Related Materials
Publication Date 2018
Deposit Date Oct 12, 2018
Volume 924
Pages 172-175
Series Title Materials Science Forum
Book Title Silicon Carbide and Related Materials 2017
DOI https://doi.org/10.4028/www.scientific.net/msf.924
Public URL https://durham-repository.worktribe.com/output/1143839



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