Optical studies of GaAs:Ti
(1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Nash, K., & Skolnick, M. (1986). Optical studies of GaAs:Ti. Journal of physics. C. Solid state physics, 19, L525-L529. https://doi.org/10.1088/0022-3719/19/23/004
Outputs (94)
Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of Crt<SUB>Ga</SUB>³⁺ (1986)
Journal Article
Halliday, D., Ulrici, W., & Eaves, L. (1986). Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of CrtGa³⁺. Journal of physics. C. Solid state physics, 19, L683-L687. https://doi.org/10.1088/0022-3719/19/29/003
Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines (1986)
Journal Article
Eaves, L., Skolnick, M., & Halliday, D. (1986). Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines. Journal of physics. C. Solid state physics, 19, L445-L446. https://doi.org/10.1088/0022-3719/19/20/005
Vanadium in GaAs and GaP (1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., & Kreissl, J. (1986). Vanadium in GaAs and GaP. Materials Science Forum, 10-12, 639-644
Photoluminescence decay time measurements and discussion of acceptor- pair bound excitons in MBE-GaAs (1985)
Journal Article
Halliday, D., Eaves, L., & Dawson, P. (1985). Photoluminescence decay time measurements and discussion of acceptor- pair bound excitons in MBE-GaAs
Interpretation of the 1.03 eV photoluminescence and absorption in GaP(Cr) in terms of internal transitions of Cr³⁺ (1985)
Journal Article
Eaves, L., Halliday, D., & Uihlein, C. (1985). Interpretation of the 1.03 eV photoluminescence and absorption in GaP(Cr) in terms of internal transitions of Cr³⁺. Journal of physics. C. Solid state physics, 18, L449-L453
Optical and Electrical Properties of Vanadium-Doped GaAs (1985)
Journal Article
Ulrici, W., Friedland, K., Eaves, L., & Halliday, D. (1985). Optical and Electrical Properties of Vanadium-Doped GaAs. physica status solidi (b) – basic solid state physics, 131(2), 719-728. https://doi.org/10.1002/pssb.2221310233
A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy (1984)
Journal Article
Eaves, L., & Halliday, D. (1984). A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy. Journal of physics. C. Solid state physics, 17, L705-L709. https://doi.org/10.1088/0022-3719/17/27/003
Development of low temperature approaches to device quality cadmium sulfide: A novel geometry for solution growth of thin films and their characterization
Journal Article
Archbold, M., Halliday, D., Durose, K., Hase, T., Boyle, D., Mazzamuto, S., Romeo, N., & Bosio, A. (online). Development of low temperature approaches to device quality cadmium sulfide: A novel geometry for solution growth of thin films and their characterization
Effects of impurities in CdTe/CdS structures: Towards enhanced device efficiencies
Journal Article
Halliday, D., Emziane, M., Durose, K., Bosio, A., & Romeo, N. (online). Effects of impurities in CdTe/CdS structures: Towards enhanced device efficiencies