L Eaves
A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy
Eaves, L; Halliday, DP
Citation
Eaves, L., & Halliday, D. (1984). A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy. Journal of physics. C. Solid state physics, 17, L705-L709. https://doi.org/10.1088/0022-3719/17/27/003
| Journal Article Type | Article |
|---|---|
| Publication Date | 1984 |
| Journal | Journal of physics, C: Solid state physics. |
| Print ISSN | 0022-3719 |
| Electronic ISSN | 1747-3802 |
| Publisher | IOP Publishing |
| Volume | 17 |
| Pages | L705-L709 |
| DOI | https://doi.org/10.1088/0022-3719/17/27/003 |
| Public URL | https://durham-repository.worktribe.com/output/1611342 |
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