A Study Of The Depth Dependence Of Photoluminescence From Thin Film Cds/cdte Solar Cells Using Bevel Etched Samples (1998)
Journal Article
Halliday, D., Eggleston, J., & Durose, K. (1998). A Study Of The Depth Dependence Of Photoluminescence From Thin Film Cds/cdte Solar Cells Using Bevel Etched Samples. Thin Solid Films, 322, 314-318. https://doi.org/10.1016/s0040-6090%2897%2900917-6

A visible LED fabricated on porous silicon using a polyaniline contact (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., & Monkman, A. (1997). A visible LED fabricated on porous silicon using a polyaniline contact

The influence of CdCl2 treatment and interdiffusion on grain boundary passivation in CdTe/CdS solar cells (1997)
Journal Article
Edwards, P., Halliday, D., Durose, K., Richter, H., & Bonnet, D. (1997). The influence of CdCl2 treatment and interdiffusion on grain boundary passivation in CdTe/CdS solar cells

Spectroscopic Study On The Effect Of Post-growth Annealing Of Cdte/cds Thin Film Photovoltaic Devices (1997)
Journal Article
Eggleston, J., Halliday, D., & Durose, K. (1997). Spectroscopic Study On The Effect Of Post-growth Annealing Of Cdte/cds Thin Film Photovoltaic Devices. Institute of physics conference series, 155, 441-444

Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.

Electroluminescence from porous silicon using a conducting polyaniline contact (1996)
Journal Article
Halliday, D., Holland, E., Eggleston, J., Adams, P., Cox, S., & Monkman, A. (1996). Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films, 276(1-2), 299-302. https://doi.org/10.1016/0040-6090%2895%2908102-x

We have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8... Read More about Electroluminescence from porous silicon using a conducting polyaniline contact.

A visible large area light emitting diode fabricated from porous silicon using a conducting polyaniline contact (1995)
Conference Proceeding
Halliday, D., Eggleston, J., Adams, P., Holland, E., & Monkman, A. (1995). A visible large area light emitting diode fabricated from porous silicon using a conducting polyaniline contact.

Optical observation of band to band transitions at the L-point in the brillouin zone in ultrathin GaAs layers (1995)
Journal Article
Halliday, D., Eggleston, J., & Lee, K. (1995). Optical observation of band to band transitions at the L-point in the brillouin zone in ultrathin GaAs layers. Bulletin of the American Physical Society, 40,

Large area electroluminescent devices fabricated on porous silicon using a polyaniline contact (1995)
Journal Article
Halliday, D., Cox, S., Monkman, A., & Beeby, A. (1995). Large area electroluminescent devices fabricated on porous silicon using a polyaniline contact. Bulletin of the American Physical Society, 40,

Optical-properties Of Ultrathin 50nm Gaas Membranes (1995)
Journal Article
Halliday, D., Eggleston, J., Lee, K., Frost, J., & Beaumont, S. (1995). Optical-properties Of Ultrathin 50nm Gaas Membranes. Solid State Communications, 96, 359-365. https://doi.org/10.1016/0038-1098%2895%2900479-3

Ultrafast electron tunnelling times in reverse biased quantum well laser structures (1992)
Journal Article
Moss, D., Halliday, D., Charbonneau, S., Aers, G., Landheer, D., Barber, R., & Chatenoud, F. (1992). Ultrafast electron tunnelling times in reverse biased quantum well laser structures

High-speed Photodetection In A Reverse Biased Gaas/algaas Grinsch Sqw Laser Structure (1992)
Journal Article
Moss, D., Landheer, D., Conn, D., Halliday, D., Charbonneau, S., Aers, G., …Chatenoud, F. (1992). High-speed Photodetection In A Reverse Biased Gaas/algaas Grinsch Sqw Laser Structure. IEEE Photonics Technology Letters, 4, 609-611. https://doi.org/10.1109/68.141984

Time resolved photoluminescence studies in a reverse biased quantum well laser structure (1992)
Journal Article
Halliday, D., Moss, D., Charbonneau, S., Aers, G., Chatenoud, F., & Landheer, D. (1992). Time resolved photoluminescence studies in a reverse biased quantum well laser structure. Applied Physics Letters, 61, 2497-2499

Ultrafast electron tunneling times in reverse-biased quantum-well laser structures (1992)
Conference Proceeding
Moss, D. J., Halliday, D. P., Charbonneau, S., Aers, G., Landheer, D., Barber, R. A., …Conn, D. (1992). Ultrafast electron tunneling times in reverse-biased quantum-well laser structures.

Ultrafast Electron-tunneling In A Reverse-biased, High-efficiency Quantum-well Laser Structure (1992)
Journal Article
Halliday, D., Moss, D., Charbonneau, S., Aers, G., Landheer, D., Chatenoud, F., & Conn, D. (1992). Ultrafast Electron-tunneling In A Reverse-biased, High-efficiency Quantum-well Laser Structure. Canadian Journal of Physics, 70, 985-992

Optical Investigation Of Charge Accumulation And Bistability In An Asymmetric Double Barrier Resonant Tunneling Heterostructure (1990)
Journal Article
Hayes, D., Skolnick, M., Simmonds, P., Eaves, L., Halliday, D., Leadbeater, M., …Pate, M. (1990). Optical Investigation Of Charge Accumulation And Bistability In An Asymmetric Double Barrier Resonant Tunneling Heterostructure. Surface Science, 228, 373-377. https://doi.org/10.1016/0039-6028%2890%2990331-2

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields (1990)
Journal Article
Skolnick, M., Hayes, D., Simmonds, P., Higgs, A., Smith, G., Hutchinson, H., …Halliday, D. (1990). Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields. Physical Review B (Condensed Matter), 41, 10754-10766. https://doi.org/10.1103/physrevb.41.10754

Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)] (1990)
Journal Article
Skolnick, M., Hayes, D., Simmonds, P., Higgs, A., Smith, G., Hutchinson, H., …Halliday, D. (1990). Erratum: Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields [Phys. Rev. B 41, 10754 (1990)]. Physical Review B (Condensed Matter), 42, 5364-. https://doi.org/10.1103/physrevb.42.5364

Residual Impurities In Autodoped Normal-gaas Grown By Mbe (1989)
Journal Article
Stanaway, M., Grimes, R., Halliday, D., Chamberlain, J., Henini, M., Hughes, O., …Hill, G. (1989). Residual Impurities In Autodoped Normal-gaas Grown By Mbe. Institute of physics conference series, 295-300

Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs (1988)
Journal Article
Payling, C., Halliday, D., Hayes, D., Saker, M., Skolnick, M., Ulrici, W., & Eaves, L. (1988). Optical-properties and zeeman spectroscopy of Ti-doped GaP and GaAs. Institute of physics conference series, 91, 125-128