Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport (2017)
Journal Article
Mullins, J., Dierre, F., Halliday, D., Tanner, B., Radley, I., Kang, Z., & Summers, C. (2017). Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport. Journal of Materials Science: Materials in Electronics, 28(16), 11950-11960. https://doi.org/10.1007/s10854-017-7004-5

Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical Vapour Transport technique and doped, in-situ during growth, with oxygen. Following hetero-epitaxial nucleation and buffer growth on 100 mm diameter G... Read More about Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport.

The nature of electrostatic potential fluctuations in Cu2ZnSnS4 and their role on photovoltaic device performance (2013)
Journal Article
Mendis, B., Shannon, M., Goodman, M., Major, J., Taylor, A., Halliday, D., & Durose, K. (2013). The nature of electrostatic potential fluctuations in Cu2ZnSnS4 and their role on photovoltaic device performance. Journal of Physics: Conference Series, 471, https://doi.org/10.1088/1742-6596/471/1/012014

Plasmon-loss imaging of polymer-methanofullerene bulk heterojunction solar cells (2013)
Journal Article
Mendis, B. G., Bishop, S. J., Groves, C., Szablewski, M., Berlie, A., & Halliday, D. P. (2013). Plasmon-loss imaging of polymer-methanofullerene bulk heterojunction solar cells. Applied Physics Letters, 102(25), Article 253301. https://doi.org/10.1063/1.4812485

The plasmon feature in an electron energy loss spectrum provides unique insight into poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) solar cells. Analysis of the intensity, shape, and energy of the plasmon reveals informatio... Read More about Plasmon-loss imaging of polymer-methanofullerene bulk heterojunction solar cells.

Microstructure and point defects in CdTe nanowires for photovoltaic applications (2013)
Journal Article
Williams, B., Halliday, D., Mendis, B., & Durose, K. (2013). Microstructure and point defects in CdTe nanowires for photovoltaic applications. Nanotechnology, 24(13), Article 135703. https://doi.org/10.1088/0957-4484/24/13/135703

Defects in Au-catalysed CdTe nanowires vapour–liquid–solid-grown on polycrystalline underlayers have been critically evaluated. Their low-temperature photoluminescence spectra were dominated by excitonic emission with rarely observed above-gap emissi... Read More about Microstructure and point defects in CdTe nanowires for photovoltaic applications.

The role of secondary phase precipitation on grain boundary electrical activity in Cu2ZnSnS4 (CZTS) photovoltaic absorber layer material. (2012)
Journal Article
Mendis, B., Goodman, M., Major, J., Taylor, A., Durose, K., & Halliday, D. (2012). The role of secondary phase precipitation on grain boundary electrical activity in Cu2ZnSnS4 (CZTS) photovoltaic absorber layer material. Journal of Applied Physics, 112(12), https://doi.org/10.1063/1.4769738

Direct observation of Cu,Zn cation disorder in Cu2ZnSnS4 solar cell absorber material using aberration corrected scanning transmission electron microscopy (2012)
Journal Article
Mendis, B., Shannon, M., Goodman, M., Major, J., Claridge, R., Halliday, D., & Durose, K. (2014). Direct observation of Cu,Zn cation disorder in Cu2ZnSnS4 solar cell absorber material using aberration corrected scanning transmission electron microscopy. Progress in Photovoltaics, 22(1), 24-34. https://doi.org/10.1002/pip.2279

Chemical analysis of individual atom columns was carried out to determine the crystal structure and local point defect chemistry of Cu2ZnSnS4. Direct evidence for a nanoscale composition inhomogeneity, in the form of Zn enrichment and Cu depletion, w... Read More about Direct observation of Cu,Zn cation disorder in Cu2ZnSnS4 solar cell absorber material using aberration corrected scanning transmission electron microscopy.

CdTe/CdS core-shell nanowire structures on glass substrates for photovoltaic applications — Growth and characterization (2011)
Conference Proceeding
Halliday, D., Williams, B., Durose, K., Mendis, B., Kartopu, G., Irvine, S., …Forbes, I. (2011). CdTe/CdS core-shell nanowire structures on glass substrates for photovoltaic applications — Growth and characterization. . https://doi.org/10.1109/pvsc.2011.6185888

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates. (2009)
Journal Article
Jiang, Q., Halliday, D., Tanner, B., Brinkman, A., Cantwell, B., Mullins, J., & Basu, A. (2009). Thick epitaxial CdTe films grown by close space sublimation on Ge substrates. Journal of Physics D: Applied Physics, 42(1), Article 012004. https://doi.org/10.1088/0022-3727/42/1/012004

Characterisation Of Cadmium Telluride Bulk Crystals Grown By A Novel "multi-tube" Vapour Growth Technique (1999)
Journal Article
Aitken, N., Potter, M., Buckley, D., Mullins, J., Carles, J., Halliday, D., …Brinkman, A. (1999). Characterisation Of Cadmium Telluride Bulk Crystals Grown By A Novel "multi-tube" Vapour Growth Technique. Journal of Crystal Growth, 199, 984-987. https://doi.org/10.1016/s0022-0248%2898%2901138-5

Electrical and optical properties of a polymer semiconductor interface (1999)
Journal Article
Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878

We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potent... Read More about Electrical and optical properties of a polymer semiconductor interface.

Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.

Electroluminescence from porous silicon using a conducting polyaniline contact (1996)
Journal Article
Halliday, D., Holland, E., Eggleston, J., Adams, P., Cox, S., & Monkman, A. (1996). Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films, 276(1-2), 299-302. https://doi.org/10.1016/0040-6090%2895%2908102-x

We have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8... Read More about Electroluminescence from porous silicon using a conducting polyaniline contact.