Energy dispersive spectroscopic measurement of charge traps in MoTe_2 (2019)
Journal Article
Townsend, N. J., Amit, I., Panchal, V., Kazakova, O., Craciun, M. F., & Russo, S. (2019). Energy dispersive spectroscopic measurement of charge traps in MoTe_2. Physical review B, 100(16), Article 165310. https://doi.org/10.1103/physrevb.100.165310

Spectroscopic techniques are vital to determine the energy distribution of trapped states in semiconducting materials to assess the quality and efficiency of electronic devices. However, there is a need for a sensitive spectroscopic technique that ca... Read More about Energy dispersive spectroscopic measurement of charge traps in MoTe_2.

Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications (2018)
Journal Article
Dimov, D., Amit, I., Gorrie, O., Barnes, M. D., Townsend, N. J., Neves, A. I., …Craciun, M. F. (2018). Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications. Advanced Functional Materials, 28(23), Article 1705183. https://doi.org/10.1002/adfm.201705183

There is a constant drive for development of ultrahigh performance multifunctional construction materials by the modern engineering technologies. These materials have to exhibit enhanced durability and mechanical performance, and have to incorporate... Read More about Ultrahigh Performance Nanoengineered Graphene-Concrete Composites for Multifunctional Applications.

Sub 20 meV Schottky barriers in metal/MoTe2 junctions (2018)
Journal Article
Townsend, N. J., Amit, I., Craciun, M. F., & Russo, S. (2018). Sub 20 meV Schottky barriers in metal/MoTe2 junctions. 2D Materials, 5(2), Article 025023. https://doi.org/10.1088/2053-1583/aab56a

he newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semiconducting transition metal dichalcogenides (TMDCs) are of particular inte... Read More about Sub 20 meV Schottky barriers in metal/MoTe2 junctions.

Role of charge traps in the performance of atomically thin transistors (2017)
Journal Article
Amit, I., Octon, T. J., Townsend, N. J., Reale, F., Wright, C. D., Mattevi, C., …Russo, S. (2017). Role of charge traps in the performance of atomically thin transistors. Advanced Materials, 29(19), Article 1605598. https://doi.org/10.1002/adma.201605598

Transient currents in atomically thin MoTe2 field‐effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge‐trapping dyna... Read More about Role of charge traps in the performance of atomically thin transistors.