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Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography (2018)
Conference Proceeding
Guo, J., Yang, Y., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., …Tanner, B. (2018). Direct observation of stress relaxation process in 4H-SiC homoepitaxial layers via in-situ synchrotron X-ray topography. In R. Stahlbush, P. Neudeck, A. Bhalla, R. Devaty, M. Dudley, & A. Lelis (Eds.), Silicon Carbide and Related Materials 2017 (176-179). https://doi.org/10.4028/www.scientific.net/msf.924

In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers (2018)
Conference Proceeding
Yang, Y., Guo, J., Raghothamachar, B., Dudley, M., Welt, S., Danilewsky, A., …Tanner, B. (2018). In-situ synchrotron X-ray topography observation of double-ended Frank-Read sources in PVT-grown 4H-SiC wafers. In R. Stahlbush, P. Neudeck, A. Bhalla, R. Devaty, M. Dudley, & A. Lelis (Eds.), Silicon Carbide and Related Materials 2017 (172-175). https://doi.org/10.4028/www.scientific.net/msf.924