Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments (2011)
Journal Article
Danilewsky, A., Wittge, J., Hess, A., Croll, A., Rack, A., Allen, D., …Tanner, B. (2011). Real-time X-ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments. physica status solidi (a) – applications and materials science, 208(11), 2499-2504. https://doi.org/10.1002/pssa.201184264

Thermal slip sources at the extremity and bevel edge of silicon wafers (2011)
Journal Article
Tanner, B., Wittge, J., Allen, D., Fossati, M., Danilwesky, A., McNally, P., …Jacques, D. (2011). Thermal slip sources at the extremity and bevel edge of silicon wafers. Journal of Applied Crystallography, 44(3), 489-494. https://doi.org/10.1107/s0021889811012088

High-resolution X-ray diffraction imaging of 200 mm silicon wafers following rapid thermal annealing at a temperature of 1270 K has revealed the presence of many early stage sources of thermal slip associated with the wafer edge. Dislocation sources... Read More about Thermal slip sources at the extremity and bevel edge of silicon wafers.

Polymeric spin-valves at room temperature (2011)
Journal Article
Morley, N., Dhandapani, D., Rao, A., Al Qahtani, H., Gibbs, M., Grell, M., …Tanner, B. (2011). Polymeric spin-valves at room temperature. Synthetic Metals, 161(7-8), 558-562. https://doi.org/10.1016/j.synthmet.2010.11.011

Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging (2011)
Journal Article
Danilewsky, A., Wittge, J., Croell, A., Allen, D., McNally, P., Vagovic, P., …Tanner, B. (2011). Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging. Journal of Crystal Growth, 318(1), 1157-1163. https://doi.org/10.1016/j.jaysgro.2010.10.199