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Facile technique for the removal of metal contamination from graphene (2015)
Journal Article
Wells, G., Hunt, M., Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Horsfall, A., …O'Neill, A. (2015). Facile technique for the removal of metal contamination from graphene. Journal of Vacuum Science and Technology B, 33(5), Article 051802. https://doi.org/10.1116/1.4928422

Metal contamination deposited on few-layer graphene (3 ± 1 monolayers) grown on SiC(0001) was successfully removed from the surface, using low cost adhesive tape. More than 99% of deposited silver contamination was removed from the surface via peelin... Read More about Facile technique for the removal of metal contamination from graphene.

Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates (2015)
Journal Article
Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2015). Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates. Materials Science Forum, 821-823, 937-940. https://doi.org/10.4028/www.scientific.net/msf.821-823.937

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function... Read More about Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.

Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects (2014)
Journal Article
Wells, G., Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Wright, N., Horsfall, A., …Hunt, M. (2014). Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects. Applied Physics Letters, 105(19), Article 193109. https://doi.org/10.1063/1.4901941

Pleat defects in graphene grown on SiC(0001) were studied and used to determine the adhesion energy between few-layer graphene (3 ± 1 monolayers) and the substrate. An adhesion energy of 3.0±1.61.0J/m2 was determined using a continuum model describin... Read More about Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects.

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature (2014)
Journal Article
Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2014). Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature. Journal of Applied Physics, 116(15), Article 154504. https://doi.org/10.1063/1.4898562

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman... Read More about Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature.