Outputs (11)

Polymorphism in Cu2ZnSnS4 and new off-stoichiometric crystal structure types (2017)
Journal Article
Bosson, C. J., Birch, M. T., Halliday, D. P., Tang, C. C., Kleppe, A. K., & Hatton, P. D. (2017). Polymorphism in Cu2ZnSnS4 and new off-stoichiometric crystal structure types. Chemistry of Materials, 29(22), 9829-9839. https://doi.org/10.1021/acs.chemmater.7b04010

Cu2ZnSnS4 (CZTS) is a very promising material for the absorber layer in sustainable thin-film solar cells. Its photovoltaic performance is currently limited by crystal structure disorder, which causes fluctuations in electrostatic potential that decr... Read More about Polymorphism in Cu2ZnSnS4 and new off-stoichiometric crystal structure types.

Cation disorder and phase transitions in the structurally complex solar cell material Cu2ZnSnS4 (2017)
Journal Article
Bosson, C., Birch, M., Halliday, D., Knight, K., Gibbs, A., & Hatton, P. (2017). Cation disorder and phase transitions in the structurally complex solar cell material Cu2ZnSnS4. Journal of Materials Chemistry A: materials for energy and sustainability, 5(32), 16672-16680. https://doi.org/10.1039/c7ta03603e

Cu2ZnSnS4 (CZTS) is a technologically important and complex quaternary semiconductor and a highly promising material for the absorber layer in sustainable thin film solar cells. Its photovoltaic performance is currently limited by low open-circuit vo... Read More about Cation disorder and phase transitions in the structurally complex solar cell material Cu2ZnSnS4.

Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport (2017)
Journal Article
Mullins, J., Dierre, F., Halliday, D., Tanner, B., Radley, I., Kang, Z., & Summers, C. (2017). Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport. Journal of Materials Science: Materials in Electronics, 28(16), 11950-11960. https://doi.org/10.1007/s10854-017-7004-5

Bulk single crystals of zinc telluride up to 10 mm thick have been grown by the Multi-Tube Physical Vapour Transport technique and doped, in-situ during growth, with oxygen. Following hetero-epitaxial nucleation and buffer growth on 100 mm diameter G... Read More about Structural and optical properties of oxygen doped single crystal ZnTe grown by multi-tube physical vapour transport.

Superconducting Properties of Titanium alloys (Ti-64 and Ti-6242) for critical current barrels (2016)
Journal Article
Ridgeon, F., Raine, M., Halliday, D., Lakrimi, M., Thomas, A., & Hampshire, D. (2017). Superconducting Properties of Titanium alloys (Ti-64 and Ti-6242) for critical current barrels. IEEE Transactions on Applied Superconductivity, 27(4), Article 4201205. https://doi.org/10.1109/tasc.2016.2645378

We have measured the superconducting properties of the titanium alloy Ti-6Al-4V (Ti-64) as-supplied and following two of the heat treatment schedules used for the Nb3Sn strands in the ITER tokamak. The Ti-64 alloy is the standard choice in the superc... Read More about Superconducting Properties of Titanium alloys (Ti-64 and Ti-6242) for critical current barrels.

Crystal structure and cation disorder in bulk Cu2ZnSnS4 using neutron diffraction and X-ray anomalous scattering (2016)
Presentation / Conference Contribution
Bosson, C., Birch, M., Halliday, D., Knight, K., Tang, C., Kleppe, A., & Hatton, P. (2016, June). Crystal structure and cation disorder in bulk Cu2ZnSnS4 using neutron diffraction and X-ray anomalous scattering. Presented at 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR

Cu2ZnSnS4 (CZTS) is a promising material for the absorber layer in sustainable thin film photovoltaic cells, but its best efficiencies are currently limited by low open-circuit voltages, thought to be due to defects such as disorder between the coppe... Read More about Crystal structure and cation disorder in bulk Cu2ZnSnS4 using neutron diffraction and X-ray anomalous scattering.

Thick epitaxial CdTe films grown by close space sublimation on Ge substrates. (2009)
Journal Article
Jiang, Q., Halliday, D., Tanner, B., Brinkman, A., Cantwell, B., Mullins, J., & Basu, A. (2009). Thick epitaxial CdTe films grown by close space sublimation on Ge substrates. Journal of Physics D: Applied Physics, 42(1), Article 012004. https://doi.org/10.1088/0022-3727/42/1/012004

Photoluminescence of gold, copper and niobium as a function of temperature (2009)
Journal Article
Armstrong, H., Halliday, D. P., & Hampshire, D. P. (2009). Photoluminescence of gold, copper and niobium as a function of temperature. Journal of Luminescence, 129(12), 1610-1614. https://doi.org/10.1016/j.jlumin.2009.04.022

A specially constructed instrument for measuring the low intensity photoluminescence emission spectra of metals is described. It uses low luminescence optical components and dedicated sample mounting techniques. Room temperature measurements agree cl... Read More about Photoluminescence of gold, copper and niobium as a function of temperature.

Characterisation Of Cadmium Telluride Bulk Crystals Grown By A Novel "multi-tube" Vapour Growth Technique (1999)
Journal Article
Aitken, N., Potter, M., Buckley, D., Mullins, J., Carles, J., Halliday, D., …Brinkman, A. (1999). Characterisation Of Cadmium Telluride Bulk Crystals Grown By A Novel "multi-tube" Vapour Growth Technique. Journal of Crystal Growth, 199, 984-987. https://doi.org/10.1016/s0022-0248%2898%2901138-5

Electrical and optical properties of a polymer semiconductor interface (1999)
Journal Article
Halliday, D., Gray, J., Adams, P., & Monkman, A. (1999). Electrical and optical properties of a polymer semiconductor interface. Synthetic Metals, 102(1-3), 877-878

We have fabricated a stable electrical interface between a range of n-type, p-type and undoped GaAs epitaxial layers and a film of conductive p-type polyaniline. The IV characteristics of this device show rectifying behaviour consistent with a potent... Read More about Electrical and optical properties of a polymer semiconductor interface.

Visible electroluminescence from a polyaniline-porous silicon junction (1997)
Journal Article
Halliday, D., Eggleston, J., Adams, P., Pentland, I., & Monkman, A. (1997). Visible electroluminescence from a polyaniline-porous silicon junction. Synthetic Metals, 85(1-3), 1245-1246

We have studied the interface formed between a p-type conducting polyaniline layer and an n-type porous silicon wafer, The contact has rectifying behaviour demonstrated clearly by the IV curves, We can fit our data to a simple Schottky barrier model.... Read More about Visible electroluminescence from a polyaniline-porous silicon junction.

Electroluminescence from porous silicon using a conducting polyaniline contact (1996)
Journal Article
Halliday, D., Holland, E., Eggleston, J., Adams, P., Cox, S., & Monkman, A. (1996). Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films, 276(1-2), 299-302. https://doi.org/10.1016/0040-6090%2895%2908102-x

We have fabricated a p-n junction using a p-type conducting polyaniline layer deposited on an n-type porous silicon layer. This junction shows rectifying behaviour. The I–V curves can be fitted to a Schottky barrier model with a barrier height of 0.8... Read More about Electroluminescence from porous silicon using a conducting polyaniline contact.