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Heavily doped semiconductors and devices (1978)
Journal Article
Abram, R., Rees, G., & Wilson, B. (1978). Heavily doped semiconductors and devices. Advances in Physics, 27(6), 799-892. https://doi.org/10.1080/00018737800101484

High carrier concentrations and the fluctuations in random potential resulting from ionized impurities alter the density of states and electron wavefunctions in heavily doped semiconductors. The theoretical and experimental work on these effects is r... Read More about Heavily doped semiconductors and devices.