Heavily doped semiconductors and devices

Abram, RA; Rees, GJ; Wilson, BLH

Abstract

High carrier concentrations and the fluctuations in random potential resulting from ionized impurities alter the density of states and electron wavefunctions in heavily doped semiconductors. The theoretical and experimental work on these effects is reviewed, special attention being paid to the consequences for the optical and transport properties. Semiconductor devices are often heavily doped and the influence of heavy doping is illustrated in the injection laser and bipolar transistor, which also serve as investigative tools.

Citation

Abram, R., Rees, G., & Wilson, B. (1978). Heavily doped semiconductors and devices. Advances in Physics, 27(6), 799-892. https://doi.org/10.1080/00018737800101484

• Journal Article Type: Article
• Publication Date: Jan 1, 1978
• Deposit Date: Jan 24, 2011
• Journal: Advances in Physics
• Print ISSN: 0001-8732
• Electronic ISSN: 1460-6976
• Publisher: Taylor and Francis Group
• Peer Reviewed: Peer Reviewed
• Volume: 27
• Issue: 6
• Pages: 799-892
• DOI: https://doi.org/10.1080/00018737800101484
• Public URL: https://durham-repository.worktribe.com/output/1605108