A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy
(1984)
Journal Article
Eaves, L., & Halliday, D. (1984). A Model For Some Defect-related Bound Exciton Lines In The Photoluminescence Spectrum Of Gaas-layers Grown By Molecular-beam Epitaxy. Journal of physics. C. Solid state physics, 17, L705-L709. https://doi.org/10.1088/0022-3719/17/27/003
Research Repository