Calculations of overlap integrals for Auger processes involving direct band gap semiconductors.

Brand, S; Abram, RA

doi:10.1088/0022-3719/17/7/004

Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. (1990)
Journal Article
Beattie, A., Abram, R., & Scharoch, P. (1990). Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. Semiconductor Science and Technology, 5, 738-744

Electron-electron collision broadening of the conduction band edge state in heavily doped n-type indium oxide. (1989)
Journal Article
Childs, G., & Abram, R. (1989). Electron-electron collision broadening of the conduction band edge state in heavily doped n-type indium oxide

Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors. (1989)
Journal Article
Beattie, A., Scharoch, P., & Abram, R. (1989). Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors. Semiconductor Science and Technology, 4, 715-723

Hole transport and relaxation in the valence bands of a GaAs/AlAs quantum well. (1989)
Journal Article
Kelsall, R., Taylor, R., Wood, A., & Abram, R. (1989). Hole transport and relaxation in the valence bands of a GaAs/AlAs quantum well. Superlattices and Microstructures, 5, 207-211

Auger recombination In low dimensional structures. (1988)
Journal Article
Abram, R., Kelsall, R., & Taylor, R. (1988). Auger recombination In low dimensional structures. Journal of Physics and Chemistry of Solids, 49, 607-613. https://doi.org/10.1016/0022-3697%2888%2990191-6

The effects of non-parabolic band structure on Auger transition rates in bulk semiconductors, quantum wells and quantum well wires. (1988)
Journal Article
Taylor, R., & Abram, R. (1988). The effects of non-parabolic band structure on Auger transition rates in bulk semiconductors, quantum wells and quantum well wires. Semiconductor Science and Technology, 3, 859-864

A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductors (1988)
Journal Article
Scharoch, P., & Abram, R. (1988). A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductors. Semiconductor Science and Technology, 3, 973-978

Hot hole creation due to impact excitation in the metal electrode of a forward biased MIS structure. (1988)
Journal Article
Jones, R., & Abram, R. (1988). Hot hole creation due to impact excitation in the metal electrode of a forward biased MIS structure. Solid-State Electronics, 31, 989-997

Generation of superlattice bandstructure using a wavefunction matching technique. (1987)
Journal Article
Taylor, R., Burt, M., & Abram, R. (1987). Generation of superlattice bandstructure using a wavefunction matching technique. Superlattices and Microstructures, 3, 63-67

Charge trapping in silicon-rich Si₃N₄ thin films. (1987)
Journal Article
Buchanan, D., Abram, R., & Morant, M. (1987). Charge trapping in silicon-rich Si₃N₄ thin films. Solid-State Electronics, 30, 1295-1301

Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance. (1987)
Journal Article
Archibald, I., & Abram, R. (1987). Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance. Philosophical Magazine B, 56, 429-441

Intervalence band absorption in semiconductor laser materials. (1986)
Journal Article
Childs, G., Brand, S., & Abram, R. (1986). Intervalence band absorption in semiconductor laser materials. Semiconductor Science and Technology, 1, 116-120

Theory of Auger recombination in a quantum well wire. (1986)
Journal Article
Taylor, R., Kelsall, R., & Abram, R. (1986). Theory of Auger recombination in a quantum well wire. Surface Science, 174, 169-174

More theory of the admittance of an amorphous silicon Schottky barrier (1986)
Journal Article
Archibald, I., & Abram, R. (1986). More theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B, 54, 421-438

Theory of Auger recombination in a quantum well heterostructure. (1985)
Journal Article
Smith, C., Abram, R., & Burt, M. (1985). Theory of Auger recombination in a quantum well heterostructure. Superlattices and Microstructures, 1, 119-123

Bandgap narrowing due to many-body effects in heavily doped semiconductors. (1985)
Journal Article
Abram, R. (1985). Bandgap narrowing due to many-body effects in heavily doped semiconductors. Solid-State Electronics, 28, 203-203

Auger recombination in long-wavelength quantum well lasers. (1984)
Journal Article
Smith, C., Abram, R., & Burt, M. (1984). Auger recombination in long-wavelength quantum well lasers. Electronics Letters, 20, 893-894

Overlap integrals for Auger recombination in direct-bandgap semiconductors: calculations for conduction and heavy-hole bands in GaAs and InP. (1984)
Journal Article
Burt, M., Brand, S., Smith, C., & Abram, R. (1984). Overlap integrals for Auger recombination in direct-bandgap semiconductors: calculations for conduction and heavy-hole bands in GaAs and InP. Journal of physics. C. Solid state physics, 17, 6385-6401. https://doi.org/10.1088/0022-3719/17/35/011

Calculations of the commonly neglected terms in the matrix element for Auger and impact ionisation processes in semiconductors. (1984)
Journal Article
Brand, S., & Abram, R. (1984). Calculations of the commonly neglected terms in the matrix element for Auger and impact ionisation processes in semiconductors. Journal of physics. C. Solid state physics, 17, L571-L574

Calculations of overlap integrals for Auger processes involving direct band gap semiconductors. (1984)
Journal Article
Brand, S., & Abram, R. (1984). Calculations of overlap integrals for Auger processes involving direct band gap semiconductors. Journal of physics. C. Solid state physics, 17, L201-L206. https://doi.org/10.1088/0022-3719/17/7/004

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