A comparison of transient velocity overshoot in Si and GaAs structures.
(1992)
Journal Article
Hughes, D., Abram, R., Kelsall, R., & Holden, A. (1992). A comparison of transient velocity overshoot in Si and GaAs structures. Semiconductor Science and Technology, 7, B390-B393
All Outputs (5)
Monte Carlo simulation of electron transport in GaAs/Ga<SUB>1-x</SUB>Al<SUB>x</SUB>As quantum wells using different phonon models. (1992)
Journal Article
Chamberlain, M., Hoare, D., Kelsall, R., & Abram, R. (1992). Monte Carlo simulation of electron transport in GaAs/Ga1-xAlxAs quantum wells using different phonon models. Semiconductor Science and Technology, 7, B45-B48
Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. (1992)
Journal Article
Kelsall, R., Abram, R., Batty, W., & O'Reilly, E. (1992). Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 86-91
Hole impactionization rates in InP and In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As. (1992)
Journal Article
Beattie, A., Abram, R., & Scharoch, P. (1992). Hole impactionization rates in InP and In0.53Ga0.47As. Semiconductor Science and Technology, 7, B512-B516
Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. (1992)
Journal Article
Kelsall, R., & Abram, R. (1992). Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 312-B315