Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp

Rikken, GLJA; Wyder, P; Chamberlain, JM; Halliday, DP; Grimes, RT

doi:10.1016/0038-1101(88)90384-x

All Outputs (3)

Residual Impurities In Autodoped Normal-gaas Grown By Mbe (1989)
Journal Article
Stanaway, M., Grimes, R., Halliday, D., Chamberlain, J., Henini, M., Hughes, O., Davies, M., & Hill, G. (1989). Residual Impurities In Autodoped Normal-gaas Grown By Mbe. Institute of physics conference series, 295-300

Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Grimes, R., & Halliday, D. (1988). Compensation ratios and electron mobility in high-purity n-InP: photoluminescence and far-infrared studies of a new theoretical relationship. Semiconductor Science and Technology, 3, 302-305

Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp (1988)
Journal Article
Rikken, G., Wyder, P., Chamberlain, J., Halliday, D., & Grimes, R. (1988). Investigations Of Recombination Mechanisms In The Pulsed Far Infra-red Photoresponse Of N-inp. Solid-State Electronics, 31, 763-766. https://doi.org/10.1016/0038-1101%2888%2990384-x