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Development of low temperature approaches to device quality CdS: A modified geometry for solution growth of thin films and their characterisation (2007)
Journal Article
Archbold, M., Halliday, D., Durose, K., Hase, T., Boyle, D., Mazzamuto, S., …Bosio, A. (2007). Development of low temperature approaches to device quality CdS: A modified geometry for solution growth of thin films and their characterisation. Thin Solid Films, 515(5), 2954-2957. https://doi.org/10.1016/j.tsf.2006.09.005

Cadmium sulphide thin films have been grown using a modified chemical bath deposition method with four innovative features: i) ethylenediamine was used as the complexing agent, enabling the use of low cadmium concentrations, ii) a rectangular bath ge... Read More about Development of low temperature approaches to device quality CdS: A modified geometry for solution growth of thin films and their characterisation.

SIMS depth profiling of CdTe-based solar cells grown on sapphire substrates. (2006)
Journal Article
Emziane, M., Durose, K., Halliday, D., Romeo, N., & Bosio, A. (2006). SIMS depth profiling of CdTe-based solar cells grown on sapphire substrates. Thin Solid Films, 511-512, 66-70. https://doi.org/10.1016/j.tsf.2005.11.094

CdTe/CdS/TCO solar cell structures were grown on sapphire substrates especially to investigate the impurity distributions in them. The study was performed using quantitative secondary ion mass spectrometry (SIMS) depth profiling, from the CdTe back s... Read More about SIMS depth profiling of CdTe-based solar cells grown on sapphire substrates..

In situ oxygen incorporation and related issues in CdTe/CdS photovoltaic devices (2006)
Journal Article
Emziane, M., Durose, K., Halliday, D., Bosio, A., & Romeo, N. (2006). In situ oxygen incorporation and related issues in CdTe/CdS photovoltaic devices. Journal of Applied Physics, 100(1), https://doi.org/10.1063/1.2209788

CdTe/CdS/SnO2/ITO:F solar cell devices were investigated using quantitative secondary ion mass spectrometry (SIMS) depth profiling. They were grown on sapphire substrates and potentially active impurity species were analyzed. The SIMS data were calib... Read More about In situ oxygen incorporation and related issues in CdTe/CdS photovoltaic devices.

Does CdTe deposition affect the impurity profile in sputtered CdS window layers? (2005)
Book Chapter
Emziane, M., Durose, K., Halliday, D., Bosio, A., & Romeo, N. (2005). Does CdTe deposition affect the impurity profile in sputtered CdS window layers?. In W. Gessert, T. Niki, S. Siebentritt, & S. Shafarman (Eds.), Thin-Film Compound Semiconductor Photovoltaics (411-416)

We report a multi-element study of impurities in CdS window layers by dynamic and quantitative SIMS. Two CdS/TCO/glass samples, grown separately using nominally the same conditions, were considered. In2O3:F grown on soda lime glass was used as TCO fo... Read More about Does CdTe deposition affect the impurity profile in sputtered CdS window layers?.

Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer (2005)
Journal Article
Emziane, M., Durose, K., Halliday, D., Bosio, A., & Romeo, N. (2005). Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer. Applied Physics Letters, 87(26), Article 261901. https://doi.org/10.1063/1.2152108

The CdTe∕CdSCdTe∕CdSsolar cell devices were grown using a dry process consisting of sputtering for the transparent conducting oxide and CdS window layers, and close-space sublimation for CdTe absorber layer. These devices were back contacted using Mo... Read More about Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer.

Role of substrate and transparent conducting oxide in impurity evolvement in polycrystalline thin-film devices (2005)
Journal Article
Emziane, M., Durose, K., Halliday, D., Bosio, A., & Romeo, N. (2005). Role of substrate and transparent conducting oxide in impurity evolvement in polycrystalline thin-film devices. Applied Physics Letters, 87(25), https://doi.org/10.1063/1.2149990

A comparison of as-grown and processed CdTe/CdS solar cell structures deposited on sapphire substrate has been undertaken with those grown on glass. The device structures were depth-profiled using quantitative secondary ion mass spectrometry. It was... Read More about Role of substrate and transparent conducting oxide in impurity evolvement in polycrystalline thin-film devices.

The distribution of impurities in the interfaces and window layers of thin-film solar cells (2005)
Journal Article
Emziane, M., Durose, K., Halliday, D., Romeo, N., & Bosio, A. (2005). The distribution of impurities in the interfaces and window layers of thin-film solar cells. Journal of Applied Physics, 97(11), Article 114910. https://doi.org/10.1063/1.1921344

We report a systematic multielement study of impurities in CdS window layers by dynamic and quantitative secondary-ion-mass spectrometry (SIMS) with high depth resolution. The study was carried out on CdTe/CdS solar cell structures, with the glass su... Read More about The distribution of impurities in the interfaces and window layers of thin-film solar cells.

A combined SIMS and ICPMS investigation of the origin and distribution of potentially electrically active impurities in CdTe/CdS solar cell structures (2005)
Journal Article
Emziane, M., Durose, K., Romeo, N., Bosio, A., & Halliday, D. (2005). A combined SIMS and ICPMS investigation of the origin and distribution of potentially electrically active impurities in CdTe/CdS solar cell structures. Semiconductor Science and Technology, 20(5), 434-442. https://doi.org/10.1088/0268-1242/20/5/019

Quantitative, dynamic secondary ion mass spectrometry (SIMS) combined with inductively coupled plasma mass spectrometry (ICPMS) was used to study the origin and distribution of impurities in CdTe/CdS/In2O3:F/glass solar cell structures. Particular em... Read More about A combined SIMS and ICPMS investigation of the origin and distribution of potentially electrically active impurities in CdTe/CdS solar cell structures.

Impurity analysis of CdCl₂ used for thermal activation of CdTe-based solar cells (2004)
Journal Article
Emziane, M., Ottley, C., Durose, K., & Halliday, D. (2004). Impurity analysis of CdCl₂ used for thermal activation of CdTe-based solar cells. Journal of Physics D: Applied Physics, 37(21), 2962-2965. https://doi.org/10.1088/0022-3727/37/21/004

We present an impurity analysis of cadmium chloride (CdCl2) using inductively coupled plasma mass spectrometry. Six batches of CdCl2 with different nominal purity ranging from 99.999% to 95% were analysed. Each batch turned out to be different in ter... Read More about Impurity analysis of CdCl₂ used for thermal activation of CdTe-based solar cells.

The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport (2003)
Journal Article
Palosz, W., Grasza, K., Durose, K., Halliday, D., Boyall, N., Dudley, M., …Cai, L. (2003). The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport. Journal of Crystal Growth, 254(3-4), 316-328. https://doi.org/10.1016/s0022-0248%2803%2901183-7

A series of cadmium telluride crystals grown by physical vapour transport without contact with the ampoule walls and cooled at different rates were characterized using synchrotron X-ray topography, photoluminescence, and chemical etching. Strain from... Read More about The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport.

Photoluminescence studies of CdS/CdTe solar cells treated with oxygen (2003)
Journal Article
Hernandez-Fenollosa, M., Halliday, D., Durose, K., Campo, M., & Beier, J. (2003). Photoluminescence studies of CdS/CdTe solar cells treated with oxygen. Thin Solid Films, 431, 176-180. https://doi.org/10.1016/s0040-6090%2803%2900238-4

In this work we have used low temperature photoluminescence (PL) to study a set of CdS/CdTe solar cells grown by close space sublimation. The samples were given a post-growth treatment at 390 °C with HCl in a varying partial pressure of oxygen of up... Read More about Photoluminescence studies of CdS/CdTe solar cells treated with oxygen.

Steady State Photoconductivity In Conjugated Polymers (2002)
Book Chapter
Sitch, C., Halliday, D., & Monkman, A. (2002). Steady State Photoconductivity In Conjugated Polymers. In G. E. Jabbour, & N. S. Sariciftci (Eds.), Electronic, Optical and Optoelectronic Polymers and Oligomers (327-331). Materials Research Society

Photoluminescence characrerisation of ion implanted CdTe (2002)
Book Chapter
Halliday, D., Potter, M., Boyle, D., & Durose, K. (2002). Photoluminescence characrerisation of ion implanted CdTe. In R. Birkmire, R. Noufi, D. Lincot, & H. Schock (Eds.), Compound Semiconductor Photovoltaic Materials: 2001 MRS Spring Meeting - Symposium H – II-IV (H1.8.1 - H1.8.6). Cambridge University Press. https://doi.org/10.1557/proc-668-h1.8

We have ion implanted a series of dopants into single crystal CdTe. The influence of the impurities on the CdTe has been studied by low temperature photoluminescence spectroscopy. The impurities studied are: O, Cl, Cu, S, Na and Sb, and were selected... Read More about Photoluminescence characrerisation of ion implanted CdTe.

The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells. (2001)
Journal Article
Hartley, A., Irvine, S., Halliday, D., & Potter, M. (2001). The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells. Thin Solid Films, 387(1-2), 89-91. https://doi.org/10.1016/s0040-6090%2800%2901722-3

CdS/CdTe photovoltaic cells have been grown by MOCVD (metal–organic chemical vapour deposition) with a range of VI/II ratios in the CdTe reactant mixture. All CdTe layers were highly doped with As (approx. 2×1018 atoms/cm3) to ensure p-type conductiv... Read More about The influence of CdTe growth ambient on MOCVD grown CdS/CdTe photovoltaic cells..