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Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well.

Kelsall, RW; Abram, RA

Authors

RW Kelsall



Citation

Kelsall, R., & Abram, R. (1992). Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology, 7, 312-B315

Journal Article Type Article
Publication Date 1992
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Volume 7
Pages 312-B315
Public URL https://durham-repository.worktribe.com/output/1626144
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1992SeScT...7B.312K&db_key=PHY



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