AR Beattie
Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors.
Beattie, AR; Scharoch, P; Abram, RA
Citation
Beattie, A., Scharoch, P., & Abram, R. (1989). Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors. Semiconductor Science and Technology, 4, 715-723
| Journal Article Type | Article |
|---|---|
| Publication Date | 1989 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Electronic ISSN | 1361-6641 |
| Publisher | IOP Publishing |
| Volume | 4 |
| Pages | 715-723 |
| Public URL | https://durham-repository.worktribe.com/output/1626103 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1989SeScT...4..715B&db_key=PHY |
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