Richard Abram r.a.abram@durham.ac.uk
Band gap narrowing due to many-body effects in silicon and gallium arsenide.
Abram, RA; Childs, GN; Saunderson, PA
Authors
GN Childs
PA Saunderson
Citation
Abram, R., Childs, G., & Saunderson, P. (1984). Band gap narrowing due to many-body effects in silicon and gallium arsenide. Journal of physics. C. Solid state physics, 17, 6105-6125. https://doi.org/10.1088/0022-3719/17/34/012
| Journal Article Type | Article |
|---|---|
| Publication Date | 1984 |
| Journal | Journal of physics, C: Solid state physics. |
| Print ISSN | 0022-3719 |
| Electronic ISSN | 1747-3802 |
| Publisher | IOP Publishing |
| Volume | 17 |
| Pages | 6105-6125 |
| DOI | https://doi.org/10.1088/0022-3719/17/34/012 |
| Public URL | https://durham-repository.worktribe.com/output/1626067 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1984JPhC...17.6105A&db_key=PHY |
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