SP Wilson
The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs.
Wilson, SP; Brand, S; Beattie, AR; Abram, RA
Citation
Wilson, S., Brand, S., Beattie, A., & Abram, R. (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. Semiconductor Science and Technology, 8, 1944-1956
| Journal Article Type | Article |
|---|---|
| Publication Date | 1993 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Electronic ISSN | 1361-6641 |
| Publisher | IOP Publishing |
| Volume | 8 |
| Pages | 1944-1956 |
| Public URL | https://durham-repository.worktribe.com/output/1619725 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1993SeScT...8.1944W&db_key=PHY |
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