AR Beattie
Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP.
Beattie, AR; Abram, RA; Scharoch, P
Citation
Beattie, A., Abram, R., & Scharoch, P. (1990). Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. Semiconductor Science and Technology, 5, 738-744
| Journal Article Type | Article |
|---|---|
| Publication Date | 1990 |
| Journal | Semiconductor Science and Technology |
| Print ISSN | 0268-1242 |
| Electronic ISSN | 1361-6641 |
| Publisher | IOP Publishing |
| Volume | 5 |
| Pages | 738-744 |
| Public URL | https://durham-repository.worktribe.com/output/1619671 |
| Publisher URL | http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1990SeScT...5..738B&db_key=PHY |
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