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Dependence of the critical thickness on Si doping of InGaAs on GaAs

Tanner, B.K.; Parbrook, P.J.; Whitehouse, C.R.; Keir, A.M.; Johnson, A.D.; Jones, J.; Wallis, D.; Smith, L.M.; Lunn, B.; Hogg, J.H.C.

Authors

P.J. Parbrook

C.R. Whitehouse

A.M. Keir

A.D. Johnson

J. Jones

D. Wallis

L.M. Smith

B. Lunn

J.H.C. Hogg



Citation

Tanner, B., Parbrook, P., Whitehouse, C., Keir, A., Johnson, A., Jones, J., …Hogg, J. (2000). Dependence of the critical thickness on Si doping of InGaAs on GaAs. Applied Physics Letters, 77, 2156-2158

Journal Article Type Article
Publication Date 2000
Journal Applied Physics Letters
Print ISSN 0003-6951
Publisher American Institute of Physics
Volume 77
Pages 2156-2158
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=2000ApPhL..77.2156T&db_key=PHY


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