Measurement of aluminum concentration in epitaxial layers of AlxGa1 - xAs on GaAs by double axis x-ray diffractometry

Tanner, B.K.; Turnbull, A.G.; Stanley, C.R.; Kean, A.H.; McElhinney, M.

Measurement of aluminum concentration in epitaxial layers of AlxGa1 - xAs on GaAs by double axis x-ray diffractometry

Tanner, B.K.; Turnbull, A.G.; Stanley, C.R.; Kean, A.H.; McElhinney, M.

Authors

Brian Tanner b.k.tanner@durham.ac.uk
Conducting Exam Musician

A.G. Turnbull

C.R. Stanley

A.H. Kean

M. McElhinney

Citation

Tanner, B., Turnbull, A., Stanley, C., Kean, A., & McElhinney, M. (1991). Measurement of aluminum concentration in epitaxial layers of AlxGa1 - xAs on GaAs by double axis x-ray diffractometry. Applied Physics Letters, 59, 2272-2274

Journal Article Type	Article
Publication Date	1991
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Volume	59
Pages	2272-2274
Public URL	https://durham-repository.worktribe.com/output/1618430
Publisher URL	http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1991ApPhL..59.2272T&db_key=PHY