Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions
Potter, M.D.G.; Cousins, M.; Durose, K.; Halliday, D.P.
Professor Douglas Halliday firstname.lastname@example.org
We have used low temperature photoluminescence (PL) to study thin film CdTe/CdS solar cell structures. The devices were produced by close space sublimation (CSS) and have undergone a post-growth treatment, a vital step in increasing device efficiency. The treatment consisted of evaporating a thin layer of CdCl2 onto the back CdTe surface and heat treating in air at 400 °C for between 10 and 120 min. This produced a range of device efficiencies from 2% to 9%. The efficiency improvements are the result of a complex interaction between the CdCl2, impurities and sulfur interdiffusion. The structures were prepared for PL by a chemical bevel etching technique which allows the luminescence emission to be studied as a function of depth throughout the sample. The main features in the PL spectra have been identified as being due to the Cl-A center and the Te-dislocation-related Y luminescence band. Using PL we have quantified the S diffusion into the CdTe which has a maximum of 20% at the interface in the most efficient samples. We have also obtained the profiles of recombination and non-radiative recombination centers in the device. We observe correlations between impurity centers and device efficiency which can help explain the effects of the CdCl2 treatment on the optoelectronic properties of the CdTe/CdS junction.
Potter, M., Cousins, M., Durose, K., & Halliday, D. (2000). Effect of interdiffusion and impurities on thin film CdTe/CdS photovoltaic junctions. Journal of Materials Science: Materials in Electronics, 11(7), 525-530. https://doi.org/10.1023/a%3A1026565632569
|Journal Article Type||Article|
|Publication Date||Oct 1, 2000|
|Deposit Date||Jun 3, 2016|
|Publicly Available Date||Jun 3, 2016|
|Journal||Journal of Materials Science: Materials in Electronics|
|Peer Reviewed||Peer Reviewed|
Published Journal Article
Reprinted from Journal of materials science : materials in electronics, 11(7), 2000, 525-530, with permission of Kluwer Law International.
You might also like
In situ oxygen incorporation and related issues in CdTe/CdS photovoltaic devices
SIMS depth profiling of CdTe-based solar cells grown on sapphire substrates.
Efficiency improvement in thin-film solar cell devices with oxygen-containing absorber layer