Richard Abram r.a.abram@durham.ac.uk
A theory of capacitance-voltage measurements on amorphous silicon Schottky barriers.
Abram, RA; Doherty, PJ
Authors
PJ Doherty
Citation
Abram, R., & Doherty, P. (1982). A theory of capacitance-voltage measurements on amorphous silicon Schottky barriers. Philosophical Magazine B, 45, 167-176
| Journal Article Type | Article |
|---|---|
| Publication Date | 1982 |
| Journal | Philosophical Magazine B |
| Print ISSN | 1364-2812 |
| Electronic ISSN | 1463-6417 |
| Publisher | Taylor and Francis |
| Volume | 45 |
| Pages | 167-176 |
| Public URL | https://durham-repository.worktribe.com/output/1613037 |
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