Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels

Crow, GC; Abram, RA; Yangthaisong, A

Abstract

A Monte Carlo simulation has been devised and used to model steady state and transient electron transport in enhancement (recessed gate) and depletion (surface gate) mode SiGe n-MODFETs that have recently been the subject of experimental study. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I-V and transfer characteristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derive the frequency bandwidth. Values of 60+/-10 GHz and 90+/-10 GHz have been derived for the intrinsic current gain cut-off frequencies fiT of the enhancement and depletion mode n-MODFETs.

Citation

Crow, G., Abram, R., & Yangthaisong, A. (2000). Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels. Semiconductor Science and Technology, 15(7), 770-775. https://doi.org/10.1088/0268-1242/15/7/319

• Journal Article Type: Article
• Publication Date: Jul 1, 2000
• Deposit Date: Dec 16, 2010
• Journal: Semiconductor Science and Technology
• Print ISSN: 0268-1242
• Electronic ISSN: 1361-6641
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 15
• Issue: 7
• Pages: 770-775
• DOI: https://doi.org/10.1088/0268-1242/15/7/319
• Public URL: https://durham-repository.worktribe.com/output/1596200