Direct measurement of twist mosaic in epitaxial GaN.

Lafford, T.A.; Ryan, P.A.; Joyce, D.E.; Goorsky, M.S.; Tanner, B.K.

Abstract

The laboratory application of grazing incidence in-plane X-ray diffraction to the measurement of the in-plane (twist) mosaic of GaN epitaxial layers is demonstrated. Only a single measurement containing no extrapolation uncertainty is required. The resolution and intensity are determined for the double axis geometry under different beam conditioning arrangements from a microfocus X-ray tube and a standard sealed source.

Citation

Lafford, T., Ryan, P., Joyce, D., Goorsky, M., & Tanner, B. (2003). Direct measurement of twist mosaic in epitaxial GaN. physica status solidi (a) – applications and materials science, 195(1), 265-270. https://doi.org/10.1002/pssa.200306270

• Journal Article Type: Article
• Publication Date: 2003-01
• Journal: physica status solidi (a)
• Print ISSN: 1862-6300
• Electronic ISSN: 1862-6319
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 195
• Issue: 1
• Pages: 265-270
• DOI: https://doi.org/10.1002/pssa.200306270
• Public URL: https://durham-repository.worktribe.com/output/1587948