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In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs

Tanner, B.K.; Parbrook, P.J.; Whitehouse, C.R.; Keir, A.M.; Johnson, A.D.; Jones, J.; Wallis, D.; Smith, L.M.; Lunn, B.; Hogg, J.H.C.

Authors

P.J. Parbrook

C.R. Whitehouse

A.M. Keir

A.D. Johnson

J. Jones

D. Wallis

L.M. Smith

B. Lunn

J.H.C. Hogg



Citation

Tanner, B., Parbrook, P., Whitehouse, C., Keir, A., Johnson, A., Jones, J., …Hogg, J. (2001). In situ x-ray topography measurement of the growth temperature dependence of the critical thickness of epitaxial InGaAs on GaAs. Journal of Physics D: Applied Physics, 34, A109-A113

Journal Article Type Article
Publication Date 2001
Journal Journal of Physics D Applied Physics
Print ISSN 0022-3727
Publisher IOP Publishing
Volume 34
Pages A109-A113
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=2001JPhD...34A.109T&db_key=PHY


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